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| BFR35AP NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 48C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 2 1 VPS05161 Marking GEs Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 20 20 2.5 30 4 280 150 -65 ... 150 -65 ... 150 Unit V mA mW C Symbol RthJS Value 365 Unit K/W Aug-01-2001 BFR35AP Electrical Characteristics Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gainIC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 A ICBO 100 nA ICES 10 A V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Aug-01-2001 BFR35AP Electrical Characteristics Parameter AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz Power gain, maximum available1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz f = 1.8 GHz 12.5 7 |S21e|2 Gma 15 9.5 F 1.8 2.9 dB Ceb 0.7 Cce 0.2 Ccb 0.38 0.6 pF fT 3.5 5 GHz Symbol min. Values typ. max. Unit 1G ma = |S21 /S12| (k-(k2 -1)1/2 ) 3 Aug-01-2001 |
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